@article{article, title  = {{Gate oxide degradation condition monitoring technique for high-frequency applications of silicon carbide power MOSFETs}},

 publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}},

 url = {{}},

 year = {{2022}},

 month = {{8}},

 author = {{Naghibi J and Mohsenzade S and Mehran K and Foster MP}},

 doi = {{10.1109/tpel.2022.3198291}},

 volume = {{38}},

 journal = {{IEEE Transactions on Power Electronics}},

 issue = {{1}},

 pages = {{1079-1091}},

 note = {{Accessed on 2024/12/22}}}