TY  - CONF

T1  - Injection-enhancement effect in a novel, trench-planar insulated gate bipolar transistor

JO  - IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS

PY  - 2001/04/01

AU  - Spulber O

AU  - De Souza MM

AU  - Sweet M

AU  - Bose JVSC

AU  - Narayanan EMS

ED  - 

DO  - DOI: 10.1049/ip-cds:20010294

VL  - 148

IS  - 2

SP  - 79

EP  - 82

Y2  - 2024/12/20

ER  -