TY  - CONF

T1  - Influence of the design parameters on the performance of 1.7 kV, NPT, planar clustered insulated gate bipolar transistor (CIGBT)

JO  - IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

PY  - 2004/01/01

AU  - Vershinin K

AU  - Sweet M

AU  - Spulber O

AU  - Hardikar S

AU  - Luther-King N

AU  - De Souza MM

AU  - Sverdloff S

AU  - Narayanan EMS

AU  - Hinchley D

ED  - 

DO  - DOI: 10.1109/wct.2004.239985

VL  - 16

SP  - 269

EP  - 272

Y2  - 2024/12/20

ER  -