@inproceedings{inproceedings, title  = {{Dynamic avalanche free design in 1.2kV Si-IGBTs for ultra high current density operation}},

 publisher = {{Institute of Electrical and Electronics Engineers}},

 url = {{http://eprints.whiterose.ac.uk/153668/ }},

 year = {{2020}},

 month = {{2}},

 author = {{Luo P and Madathil SNE and Nishizawa S-I and Saito W}},

 doi = {{10.1109/IEDM19573.2019.8993596}},

 isbn = {{9781728140339}},

 journal = {{Proceedings of 2019 IEEE International Electron Devices Meeting (IEDM)}},

 note = {{Accessed on 2024/12/20}}}