TY  - CONF

T1  - The effect of dielectric stress on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs)

JO  - EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS

PY  - 2002/01/01

AU  - Tan WS

AU  - Hill G

AU  - Houston PA

AU  - Low MW

AU  - Parbrook PJ

AU  - Airey RJ

ED  - 

SP  - 130

EP  - 135

Y2  - 2024/12/20

ER  -