TY  - JOUR

T1  - Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications

JO  - Microelectronic Engineering

PY  - 1995/01/01

AU  - Clough FJ

AU  - Brown AO

AU  - Ekkanath Madathil SN

AU  - Milne WI

ED  - 

DO  - DOI: 10.1016/0167-9317(95)00095-P

VL  - 28

IS  - 1-4

SP  - 451

EP  - 454

Y2  - 2024/12/20

ER  -