TY  - JOUR

T1  - Investigation of negative gate capacitance in MOS-gated power devices

JO  - IEEE Transactions on Electron Devices

PY  - 2012/01/01

AU  - Long HY

AU  - Sweet MR

AU  - Narayanan EMS

ED  - 

DO  - DOI: 10.1109/TED.2012.2219536

VL  - 59

IS  - 12

SP  - 3464

EP  - 3469

Y2  - 2024/12/20

ER  -