TY  - CONF

T1  - Breakdown characteristics of (AlXGa1-X)(0.52)In0.48P p-i-n diodes

JO  - ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS

PY  - 1996/01/01

AU  - David JPR

AU  - Ghin R

AU  - Plimmer SA

AU  - Hopkinson M

AU  - Allan J

ED  - Majlis BY

ED  - Shaari S

SP  - 256

EP  - 260

Y2  - 2024/12/20

ER  -