TY - CONF T1 - Enhanced photoluminescence intensity of 1.3-μm multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step JO - Physica E: Low-dimensional Systems and Nanostructures PY - 2005/02/01 AU - Liu HY AU - Badcock TJ AU - Sellers IR AU - Soong WM AU - Groom KM AU - Hopkinson M AU - Mowbray DJ AU - Skolnick MS ED - DO - DOI: 10.1016/j.physe.2004.08.038 PB - Elsevier BV VL - 26 IS - 1-4 SP - 129 EP - 132 Y2 - 2024/12/22 ER -