GaN Centre team
Academic staff
Research interests:
- MOCVD growth of III-nitride materials and devices
- Nanofabrication of III-nitride optoelectronics with ultrahigh efficiency
- III-nitride based solid-state lighting
- Application of plasmonics in III-nitride optoelectronics
- Application of photonics crystal in III-nitride optoelectronics
- III-nitride Solar Cell
- III-nitride optoelectronics for hydrogen generation
Research Interests:
Focused on GaN related materials and devices, particularly optoelectronics.
- Hybrid organic/inorganic optoelectronics
- Non-radiative energy transfer processes in hybrid GaN/organic interfaces
- High efficiency semi-polar GaN based materials, LEDs and LD structures
- Optical characterization techniques of III-nitride materials and devices
Visiting academics
- Dr Yu Lu
-
Anhui University of Technology
Research interests:
- III-nitride based LED and LD
- HVPE growth of GaN substrate
- Dr Qiang Wang
-
Qilu University of Technology
Research interests:
- nano/micro fabrication and characterisation of III-nitride based LED
- Professor Pallab Bhattacharya
- Dr Jayanta Sarma
Research staff
- Dr Jie Bai
-
Ph.D, University of Tokushima, Japan
Research Interests:
- Nanotechnology including fabrication of templates for semi-/non-polar GaN overgrowth;
- III-nitride-based high-brightness nanorod array LEDs, UV-LEDs, solar cells with photonic nanostructures and Laser Diodes on sapphire substrates;
- High-resolution transmission electron microscopy and energy x-ray microanalysis study of nitride-related semiconductor materials;
- Structural and optical investigation of InGaN/GaN and GaN/AlGaN multiple quantum well structures.
- Dr Suneal Ghataora
-
PhD in Electronic and Electrical Engineering, University of ºù«Ӱҵ, UK, 2019
B.Eng. Electronic and Electrical Engineering, ºù«Ӱҵ
Research interests:
- Fabrication and characterisation of hybrid organic and inorganic III-Nitride semiconductor light emitting opto-electronic devices
- Dr Xiangyu He
-
PhD in Physics, University of Strathclyde 2021
MSc in Science, University of Strathclyde
Research interests:
- Fabrication and characterization of III-Nitride micro light emitting opto-electronic devices
- Dr Kai Huang
-
PhD in Microelectronics and Solid State Electronics, Nanjing University, China, 2007
BSc in Microelectronics, Nanjing University, China, 2002Research interests:
- AlGaN based deep UV optoelectronics
- plasmonics in III-nitride optoelectronics
- Dr Sheng Jiang
-
PhD in Electronic and Electrical Engineering, the University of ºù«Ӱҵ, UK, 2018
MSc in Electronic and Electrical Engineering, the University of ºù«Ӱҵ, UK, 2013
BEng in Automatic Control and Electrical Systems Engineering, East China University of Science and Technology (ECUST), Shanghai, China, 2011Research interests:
- GaN based high-voltage high-frequency transistors for power switching applications
- GaN based integrated circuits and systems
- Dr Nicolas Poyiatzis
-
PhD in Electronic and Electrical Engineering, University of ºù«Ӱҵ, 2020
MEng Electrical Engineering, ºù«ӰҵResearch interests:
- Fabrication and characterization of semi-polar III-Nitride based opto-electronics
Support staff
- Stephen Atkin
- Katherine Greenacre
PhD students
- Mr Philippe Roosvelt Bantsi
-
MSc Electronic Engineering, Bangor University, UK, 2017
BEng Electronic Engineering, Bangor University, UK, 2016Research interests:
- fabrication and characterisation of hybrid organic and inorganic III Nitride based opto-electronic devices (LED and LASER)
- transfer printing technique for hybrid device fabrication
- non-radiative energy transfer processes for opto-electronic devices
- Mr Si Chen
-
MEng, Electronic and Electrical Engineering, the University of ºù«Ӱҵ, UK
Research interests:
- GaN based hybrid microcavity light emitting devices
- fabrication and characterization of GaAs based photonic devices
- Mr Xinchi Chen
-
MSc in Electronic and Electrical Engineering, University of ºù«Ӱҵ, UK, 2019
BEng in Electronic Engineering, University of Huddersfield, UK, 2018
BEng in Electronic and Information Engineering, Beijing University of Aeronautics and Astronautics (BUAA), Beijing, China, 2017Research Interests:
- Monolithically integrated III-nitride micro-LEDs on silicon for micro-displays
- Mr William Cripps
-
MSci Experimental Physics, Royal Holloway, University of London, UK
MSc Compound Semiconductor Physics, Cardiff University, UKResearch interests:
- deterministic nanoscale transfer printing of compound semiconductor nanowires
- Mr Volkan Esendag
-
MEng Electronics and Nanotechnology, University of Leeds
Research interests:
- Monolithic Integration of Group III-Nitrides on a Si Substrate
- Electronic Characterisation of Micro-LEDs
- Non-polar III-Nitride Power Devices on Sapphire
- High-Breakdown, Low Screw Dislocation High Electron Mobility Transistor Structures
- Mr Peng Feng
-
BSc, Applied Physics, Qingdao University of Technology
MSc, Semiconductor Photonics and Electronics, University of ºù«ӰҵResearch interests:
- Growth and characterisation of monolithically integrated III-nitride micro-LED arrays.
- Mr Peter Fletcher
-
Research interests:
- Growth and growth related material characteristics, optical investigation on non-polar and semi-polar multi quantum wells
- Optical investigation of non-polar and semi-polar nano-membranes using conductive etching approach
- Mr Jack Haggar
-
Research interests:
- Fabrication and characterisation of III-Nitride photonics and electronics for visible light wireless communications.
- Mr Zhiheng Lin
-
MSc, Semiconductor Photonics and Electronics, University of ºù«Ӱҵ
Research Interests:
- Monolithically integrated III-nitride micro-LEDs on silicon for micro-displays
- Mr Guillem MartÃnez de Arriba
-
Bsc Electronic Engineering for Telecommunications, Autonomous University of Barcelona (UAB), Spain
Msc Electronic and Electrical Engineering, ºù«ӰҵResearch Interests:
- III nitrides materials for HEMT and Microdisk laser devices
- Miss Rongzi Ni
-
BSc, Electronic Science and Technology, Yanshan University (YSU), China
MSc, Semiconductor Photonics and Electronics, ºù«Ӱҵ, UKResearch interests:
- Monolithic integration of III-nitride micro-emitters
- Mr Ye Tian
-
B.Sc, Electrical Engineering, University of Liverpool
MSc, Semiconductor Photonics and Engineering, University of ºù«ӰҵResearch interests:
The growth of nitrogen-polar III-nitride based materials by MOCVD. Investigation of nitrogen-polar nano-membranes using conductive etching approach.
- Mr Valerio Trinito
-
Bsc Electronic Engineering, Sapienza - University of Rome, Italy
Msc Nanotechnologies for ICTs, Polytechnic of Turin, ItalyResearch interests:
- Matlab Modelling
- Opto-Electronic Devices Simulations
- III-V Materials Applied to Solar Cells and LEDs
- Measurement and Characterization of Opto-Electronic Devices
- Mr Ce Xu
-
BSc, Electronic and Electrical Engineering , University of Greenwich
MSc, Electronic and Electrical Engineering, University of ºù«ӰҵResearch interests:
- Growth and characterisation of monolithically integrated III-nitride micro-LED
- Mr Xuefei Yang
-
MSc in Electronics and Electrical Engineering, the University of ºù«Ӱҵ, UK, 2018
BEng in Electronic and Electrical Engineering, University of ZhengZhou(ZZU), ZhengZhou, China, 2016Research interests:
- superluminescent Light Emitting Diode with Quantum Dots fabricated by Transfer printing and simulated by FDTD
- Mr Xuanming Zhao
-
Msc Graduate, the University of ºù«Ӱҵ, UK, 2015
Research interests:
- growth of Semi-polar III-nitride based materials on silicon substrates by MOCVD and Template Fabrication.
- Mr Wei Zhong
-
BEng, Opto-electronic Engineering, Shenzhen University
MSc, Semiconductor Photonics and Electronics, University of ºù«ӰҵResearch interests:
- Growth and fabrication of III-nitride micro-LED based micro-display
- Mr Yilun Zhou
-
MSc, Semiconductor Photonics and Electronics, the University of ºù«Ӱҵ, UK
Research interests:
- growth and characterisation of III-nitride material by sputtering deposition
- Mr Chenqi Zhu
-
B.Sc, Electronic and Electrical Engineering, Shaanxi Normal University
MSc, Electronic and Electrical Engineering, University of ºù«ӰҵResearch interests:
- Monolithic Integration and growth of Group III-Nitrides on Si Substrate
