Professor Mark Hopkinson
PhD, BSc
School of Electrical and Electronic Engineering
Departmental Director of Research & Innovation
Professor in Electrical Engineering
+44 114 222 5385
Full contact details
School of Electrical and Electronic Engineering
- Profile
-
I received my BSc degree from the University of Birmingham and my PhD from the University of 葫芦影业 for a thesis entitled “Properties of hydrogenated Amorphous Silicon Nanostructures”).
After three years as a PDRA at the University of Warwick working on SiGe epitaxy, I returned to 葫芦影业 in 1990 to join the EPSRC National Centre for III–V Technologies, first as a PDRA and then as research fellow.
In 1988 I spent a half year working as a visiting researcher at the University of Minnesota. In 2000 I joined Marconi PLC as a senior scientist working on GaAs microwave devices.
In 2003, I returned to the University of 葫芦影业 as a senior research fellow (staff) and in 2007 was awarded a personal chair.
My research is focussed on semiconductor epitaxy; a field in which I have published over 500 papers, made over 200 conference presentations, over 30 invited talks, produced several book chapters and a few editorials.
Around 15 of my publications have 100 citations. For over a decade I have served on the major conference steering committees in my field.
I have also received two international awards: a Pierre de Fermat fellowship from France and the Huang Kun Medal from the Beijing Institute of Semiconductors.
Starting with silicon MBE at Warwick University, I moved on to work on III-V materials from 1990 onwards and now have almost 30 years’ experience in MBE with particular emphasis on III-V semiconductor nanostructuring (including quantum dots, nanowires, selective area growth etc)
My current research interests include novel electronic materials, semiconductor nanostructures, electronics-photonics integration, ultrafast photonic devices and the application of photonics for sensing and healthcare applications.
Recent work has focussed on methods for the in-situ patterning of semiconductors, work which includes the EU Horizon 2020 project “Nanostencil” which I am coordinating.
The project is focused on the application of laser interference lithography to pattern semiconductor surfaces during the growth process. Other areas of activity include high speed semiconductor optical switching and novel quantum photonic devices.
- Qualifications
-
- PhD (Physics), 葫芦影业 (1990)
- BSc (Physics), Birmingham (1984)
- Research interests
-
- Semiconductor Epitaxy (MBE)
- New methods for the growth, processing and characterisation of III-V nanostructures for
advanced photonic and electronic devices - Ultrafast photonic devices
- Publications
-
Books
Edited books
Journal articles
- . Optics & Laser Technology, 181, 111951-111951.
- . Journal of Applied Physics, 136(12).
- . IEEE Transactions on Electron Devices, 1-6.
- . Semiconductor Science and Technology, 38(2).
- . Applied Physics Letters, 118(14), 142101-142101.
- . AIP Advances, 10(10).
- . Applied Physics Letters, 116(20), 201901-201901.
- . Applied Surface Science, 526, 146713-146713.
- . ACS Applied Nano Materials, 3(5), 4739-4746.
- . Scientific Reports, 10(1).
- . IEEE Journal of Selected Topics in Quantum Electronics, 1-1.
- . IET Optoelectronics, 14(3), 100-103.
- . Crystals, 9(10).
- . Nature Communications, 10(1).
- . IET Optoelectronics, 13(1), 23-26.
- . IET Optoelectronics, 13(1), 7-11.
- . Advanced Materials, 30(21).
- . Advanced Materials, 30(21), 1870147-1870147.
- . Microelectronic Engineering, 174, 16-19.
- . Physical Review B, 93(23).
- . Nature Physics, 12(7), 688-693.
- . Nature Communications, 6.
- . Applied Physics Letters, 104(24).
- . Journal of Materials Science, 49(11), 3898-3908.
- Photoluminescence in Tilted Magnetic Field of Triply Negatively Charged Excitons Hybridized with a Continuum. ACTA PHYSICA POLONICA A, 124(5), 798-800.
- . Journal of Physics D: Applied Physics, 46(40).
- . Semiconductor Science and Technology, 28(9).
- . Physical Review B, 87(20).
- . Physica Status Solidi (C) Current Topics in Solid State Physics, 10(4), 564-566.
- . IEEE Journal on Selected Topics in Quantum Electronics, 19(5).
- . Photonics and Nanostructures - Fundamentals and Applications.
- . Applied Physics Letters, 101(25).
- . Applied Physics Letters, 101(25).
- . Journal of Applied Physics, 112(7).
- . Physical Review B, 85(16).
- Electrical characterisation of p-doped distributed Bragg reflectors in electrically pumped GaInNAs VCSOAs for 1.3 μm operation. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 177(10), 739-743.
- . Proceedings of SPIE - The International Society for Optical Engineering, 8432.
- . Journal of Applied Physics, 111(8).
- . Physical Review Letters, 108(11).
- . Applied Physics Letters, 100(15).
- Electrical characterisation of p-doped distributed Bragg reflectors in electrically pumped GaInNAs VCSOAs for 1.3 μm operation. Materials Science and Engineering B.
- . PHYS REV B, 84(4).
- . APPL PHYS LETT, 98(23).
- In situ control and monitoring of photonic device intermixing during laser irradiation. OPT EXPRESS, 19(10), 9535-9540.
- . APPL PHYS LETT, 98(13).
- . NANOSCALE RES LETT, 6.
- Splitting and lasing of whispering gallery modes in quantum dot micropillars. Optics InfoBase Conference Papers.
- Robust optical inversion of the excitonic population of InGaAs quantum dots via adiabatic rapid passage. Optics InfoBase Conference Papers.
- Gainnas-based hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation. Nanoscale Research Letters, 6, 1-7.
- . AIP Conference Proceedings, 1399, 593-594.
- Strongly coupled single quantum dot in a photonic crystal waveguide cavity. AIP Conference Proceedings, 1399, 1017-1018.
- . Journal of Applied Physics, 110(12).
- . AIP Conference Proceedings, 1399, 441-442.
- Adiabatic rapid passage on a single exciton. AIP Conference Proceedings, 1399, 491-492.
- . Physica Status Solidi (C) Current Topics in Solid State Physics, 8(5), 1655-1658.
- Ano express open accesgainnas-based hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation. Nanoscale Research Letters, 6(1), 1-7.
- . International Conference on Transparent Optical Networks.
- . 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011.
- Splitting and lasing of whispering gallery modes in quantum dot micropillars. 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011.
- . OPT COMMUN, 283(24), 5092-5098.
- . APPL PHYS LETT, 97(22).
- . IEEE J QUANTUM ELECT, 46(11), 1582-1589.
- . Opt Express, 18(21), 22578-22592.
- . APPL PHYS LETT, 97(11).
- . Journal of Physics: Conference Series, 245(1).
- . APPL PHYS LETT, 97(7).
- . APPL PHYS LETT, 97(3).
- . PHYS REV LETT, 104(25).
- . APPL PHYS LETT, 96(15).
- . J APPL PHYS, 107(7).
- . Opt Express, 18(7), 7055-7063.
- . J VAC SCI TECHNOL B, 28(2), 371-375.
- . ELECTRON LETT, 46(4), 295-U49.
- . ELECTRON LETT, 46(2), 161-U87.
- . Conference Digest - IEEE International Semiconductor Laser Conference, 65-66.
- . Journal of Physics: Conference Series, 244.
- . 2010 12th International Conference on Transparent Optical Networks, ICTON 2010.
- . Proceedings of SPIE - The International Society for Optical Engineering, 7610.
- . Proceedings of SPIE - The International Society for Optical Engineering, 7720.
- . Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 249-252.
- . Applied Physics Letters, 97(11).
- . IEEE Journal of Quantum Electronics, 46(12), 1847-1853.
- . Journal of Physics: Conference Series, 209.
- . Journal of Physics: Conference Series, 209.
- . Journal of Physics: Conference Series, 209.
- . IEEE Journal on Selected Topics in Quantum Electronics, 16(4), 748-754.
- . IEEE Journal on Selected Topics in Quantum Electronics, 16(4), 1015-1022.
- . REV SCI INSTRUM, 81(1).
- . International Journal of Nanoscience, 8(1-2), 107-111.
- . SURF SCI, 603(24), 3439-3444.
- . APPL PHYS LETT, 95(17).
- . APPL PHYS LETT, 95(14).
- . J CRYST GROWTH, 311(20), 4478-4482.
- . PHYS REV B, 80(16).
- . NEW J PHYS, 11.
- . PHYS REV B, 80(12).
- . SOLID STATE COMMUN, 149(35-36), 1458-1465.
- . SURF SCI, 603(16), 2398-2402.
- Coherence function control of Quantum Dot Superluminescent Light Emitting Diodes by frequency selective optical feedback. OPT EXPRESS, 17(16), 13365-13372.
- . J APPL PHYS, 106(2).
- . APPL PHYS LETT, 95(2).
- Flat-topped emission centred at 1 250 nm from quantum dot superluminescent diodes. S AFR J SCI, 105(7-8), 276-277.
- . Phys Rev Lett, 102(20), 207401.
- . IEEE J SEL TOP QUANT, 15(3), 757-763.
- . IEEE J SEL TOP QUANT, 15(3), 819-827.
- . J PHYS-CONDENS MAT, 21(17).
- . IET OPTOELECTRONICS, 3(2), 100-104.
- . MICROELECTRONICS JOURNAL, 40(3), 588-591.
- . J APPL PHYS, 105(5).
- . PHYS REV B, 79(12).
- . APPL PHYS LETT, 94(3).
- High power performances of broad bandwidths superluminescent diodes (SLDs) based on chirped-quantum-dot structures operating at 1100 and 1200 nm for optical coherence tomography (OCT) applications. Optics InfoBase Conference Papers.
- Controlling the coherence properties of quantum dot superluminescent light emitting diodes via frequency selective optical feedback. Optics InfoBase Conference Papers.
- Joint theoretical and experimental investigations of the CW lasing and turn-on dynamics of a quantum-dot semiconductor laser. Optics InfoBase Conference Papers.
- Cavity-enhanced polarization control and observation of off-resonant coupling in quantum dot nanocavities. Optics InfoBase Conference Papers.
- Picosecond coherent control of dressed states in a single quantum dot. Optics InfoBase Conference Papers.
- . Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 406-407.
- . Physica Status Solidi (C) Current Topics in Solid State Physics, 6(6), 1441-1444.
- . CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.
- . CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.
- . CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.
- . Physica Status Solidi (C) Current Topics in Solid State Physics, 6(12), 2652-2654.
- . AIP Conference Proceedings, 1199, 293-294.
- . CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.
- . IEEE J QUANTUM ELECT, 45(1-2), 79-85.
- . APPL PHYS LETT, 93(25).
- Quantum dot dipole orientation and excitation efficiency of micropillar modes. OPT EXPRESS, 16(23), 19201-19207.
- . APPL PHYS LETT, 93(16).
- . APPL PHYS LETT, 93(10).
- . APPL PHYS LETT, 93(8).
- . APPL PHYS LETT, 93(7).
- . APPL PHYS LETT, 93(7).
- . PHYS REV B, 78(7).
- . J APPL PHYS, 104(2).
- . APPL PHYS LETT, 93(2).
- . IEEE J SEL TOP QUANT, 14(4), 1162-1170.
- . APPL PHYS LETT, 92(25).
- . Phys Rev Lett, 100(19), 197401.
- . APPL PHYS LETT, 92(18).
- . IEEE PHOTONIC TECH L, 20(9-12), 942-944.
- . JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2965-2967.
- . PHYS REV B, 77(12).
- . PHYS REV B, 77(12).
- . APPL PHYS LETT, 92(2).
- Whispering gallery modes in quantum dot micropillar cavities. Optics InfoBase Conference Papers.
- Controlled rotation (C-ROT) gate in a single self-assembled quantum dot. Optics InfoBase Conference Papers.
- Coupled resonant modes of dual L3-defect planar photonic crystal cavities. Optics InfoBase Conference Papers.
- Fast optical preparation, control, and detection of a single hole spin in a quantum dot. Optics InfoBase Conference Papers.
- Mapping of the initial volume at the onset of plasticity in nanoindentation. Materials Research Society Symposium Proceedings, 1049, 85-91.
- . Proceedings of SPIE - The International Society for Optical Engineering, 6997.
- . 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08, 111-112.
- . Microscopy and Microanalysis, 14(SUPPL. 2), 318-319.
- . PHYS REV B, 77(4).
- . J APPL PHYS, 103(1).
- . APPL PHYS LETT, 91(25).
- . Opt Express, 15(25), 17221-17230.
- . IEEE J QUANTUM ELECT, 43(11-12), 1129-1139.
- . APPL PHYS LETT, 91(14).
- . APPL PHYS LETT, 91(14).
- . J PHYS D APPL PHYS, 40(18), 5537-5540.
- A Quantum Dot Swept Laser Source Based Upon a Multi Section Laser Device. Extended abstracts of the ... Conference on Solid State Devices and Materials, 2007, 1014-1015.
- . APPL PHYS LETT, 91(12).
- . IEEE J SEL TOP QUANT, 13(5), 1261-1266.
- . IEEE J SEL TOP QUANT, 13(5), 1267-1272.
- . APPL PHYS LETT, 91(8).
- . J APPL PHYS, 102(4).
- . APPL PHYS LETT, 91(7).
- . NEW J PHYS, 9.
- . Microscopy and Microanalysis, 13(S02).
- . PHYS REV B, 76(8).
- . IEEE T ELECTRON DEV, 54(8), 2051-2054.
- . APPL PHYS LETT, 91(5).
- . APPL PHYS LETT, 91(2).
- . J APPL PHYS, 102(1).
- . J VAC SCI TECHNOL B, 25(4), 1197-1202.
- . IEEE J QUANTUM ELECT, 43(7-8), 698-703.
- . APPL PHYS LETT, 90(24).
- . ELECTRON LETT, 43(12), 670-672.
- . APPL PHYS LETT, 90(21).
- . ELECTRON LETT, 43(10), 587-589.
- . IEEE J QUANTUM ELECT, 43(5-6), 503-507.
- . APPL PHYS LETT, 90(16).
- . APPL PHYS LETT, 90(16).
- Probing the scattering potential of N-impurittes in GaAs by magneto-tunneling. INT J MOD PHYS B, 21(8-9), 1600-1604.
- . APPL PHYS LETT, 90(15).
- . LASER PHYS, 17(4), 305-309.
- . JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(4B), 2418-2420.
- . JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(4B), 2421-2423.
- . J APPL PHYS, 101(6).
- . APPL PHYS LETT, 90(11).
- . PHYS REV B, 75(11).
- . PHYS REV B, 75(11).
- . SEMICOND SCI TECH, 22(3), 245-248.
- . J APPL PHYS, 101(4).
- . APPL PHYS LETT, 90(5).
- . J MOD OPTIC, 54(2-3), 453-465.
- . Phys Rev Lett, 98(2), 026806.
- . APPL PHYS LETT, 90(2).
- Dynamics of exciton recombination in InAs quantum dots embedded in InGaAs/GaAs quantum well. Optics InfoBase Conference Papers.
- Dynamics of exciton recombination in InAs quantum dots embedded in InGaAs/GaAs quantum well. Optics InfoBase Conference Papers.
- Dynamics of exciton recombination in InAs quantum dots embedded in InGaAs/GaAs quantum well. Optics InfoBase Conference Papers.
- Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure. Optics InfoBase Conference Papers.
- Systematic study of the effects of δ-p-doping on 1.3μm dot-in-well lasers. Optics InfoBase Conference Papers.
- Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure. Optics InfoBase Conference Papers.
- InGaAs-AlAsSb quantum cascade lasers: Towards 3 μm emission. Optics InfoBase Conference Papers.
- Fast intraband capture and relaxation in InAs/GaAs self-assembled quantum dots. Optics InfoBase Conference Papers.
- Photon coupling mechanism in 1.3-μm quantum-dot lasers. Optics InfoBase Conference Papers.
- Modes of the L3 defect cavity in InAs quantum dot photonic crystals. Optics InfoBase Conference Papers.
- Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure. Optics InfoBase Conference Papers.
- Photon coupling mechanism in 1.3-μm quantum-dot lasers. Optics InfoBase Conference Papers.
- CQED-enhanced single photon sources from InGaAs quantum dots. Optics InfoBase Conference Papers.
- Photon coupling mechanism in 1.3-μm quantum-dot lasers. Optics InfoBase Conference Papers.
- THz direct detector with 2D electron gas periodic structure absorber.. Proceedings of the Eighteenth International Symposium on Space Terahertz Technology 2007, ISSTT 2007, 123-127.
- . Conference on Lasers and Electro-Optics, 2007, CLEO 2007.
- . Physical Review B - Condensed Matter and Materials Physics, 76(7).
- . Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series.
- . Physica Status Solidi (C) Current Topics in Solid State Physics, 4(4), 1477-1480.
- . Proceedings of 2007 9th International Conference on Transparent Optical Networks, ICTON 2007, 4, 170-172.
- . Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series.
- . Conference on Lasers and Electro-Optics Europe - Technical Digest.
- . Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series.
- . Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 435-436.
- . Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series.
- . Optics Letters, 32(1), 44-46.
- . IEEE T ELECTRON DEV, 54(1), 11-16.
- . IEEE PHOTONIC TECH L, 19(2-4), 109-111.
- . J APPL PHYS, 101(1).
- . APPL PHYS LETT, 89(26).
- . J CRYST GROWTH, 297(1), 38-43.
- . MICROELECTRONICS JOURNAL, 37(12), 1505-1510.
- . MICROELECTRONICS JOURNAL, 37(12), 1468-1470.
- . J APPL PHYS, 100(10).
- . J APPL PHYS, 100(9).
- . IEEE J QUANTUM ELECT, 42(11-12), 1259-1265.
- . APPL PHYS LETT, 89(18).
- . APPL PHYS LETT, 89(18).
- . APPL PHYS LETT, 89(15).
- . SEMICONDUCTORS+, 40(10), 1162-1164.
- . PHYS REV B, 74(16).
- . J APPL PHYS, 100(6).
- MBE Growth of High Power Quantum Dot Superluminescent LEDs. Extended abstracts of the ... Conference on Solid State Devices and Materials, 2006, 276-277.
- . APPL PHYS LETT, 89(7).
- . ELECTRON LETT, 42(16), 923-924.
- . ELECTRON LETT, 42(16), 922-923.
- . IEEE PHOTONIC TECH L, 18(13-16), 1518-1520.
- . IEEE PHOTONIC TECH L, 18(13-16), 1557-1559.
- . J APPL PHYS, 100(1).
- . PHYS REV LETT, 96(23).
- . APPL PHYS LETT, 88(19).
- . APPL PHYS LETT, 88(19).
- Broad-Band Superluminescent Light Emitting Diodes Incorporating Quantum Dots in Compositionally Modulated Quantum Wells. Japanese journal of applied physics Pt. 1 Regular papers, brief communications & review papers, 45(4), 2542-2545.
- . JPN J APPL PHYS 1, 45(4A), 2542-2545.
- . APPL PHYS LETT, 88(13).
- . APPL PHYS LETT, 88(12).
- . APPL PHYS LETT, 88(11).
- . IEEE PHOTONIC TECH L, 18(5-8), 965-967.
- . APPL PHYS LETT, 88(8).
- . J APPL PHYS, 99(4).
- . APPL PHYS LETT, 88(5).
- High Q values and polarised emission from microcavity pillars with elliptical cross-section. Optics InfoBase Conference Papers.
- Mid-infrared optical coherence tomography: Application in tissue engineering. Optics InfoBase Conference Papers.
- Dephasing of polarons in InAs/GaAs self-assembled quantum dots. Optics InfoBase Conference Papers.
- Control of nuclear spin in InGaAs quantum dots. Optics InfoBase Conference Papers.
- Ingaas-alassb quantum cascade lasers emitting at 4.4 μm. Optics InfoBase Conference Papers.
- Engineering spin-polarization dynamics in InGaAs dot-in-a-well (DWELL) structures. Optics InfoBase Conference Papers.
- High power, very low noise, C.W. operation of 1.32μm quantum-dot fabry-perot laser diodes. Conference Digest - IEEE International Semiconductor Laser Conference, 39-40.
- . Microscopy and Microanalysis, 12(SUPPL. 2), 754-755.
- . Proceedings of SPIE - The International Society for Optical Engineering, 6399.
- . Proceedings of SPIE - The International Society for Optical Engineering, 6275.
- . Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006.
- . Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006.
- . Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006.
- . 2006 International Conference on Transparent Optical Networks, 1, 67-70.
- Maximising the gain and minimising the non-radiative recombination in 1.3μm quantum dot lasers. Conference Digest - IEEE International Semiconductor Laser Conference, 75-76.
- . INTERMAG 2006 - IEEE International Magnetics Conference, 94.
- . Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006.
- . INTERMAG 2006 - IEEE International Magnetics Conference, 876.
- . Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006.
- . Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006.
- . Conference Digest - IEEE International Semiconductor Laser Conference, 155-156.
- . IEEE PHOTONIC TECH L, 18(1-4), 58-60.
- . J CRYST GROWTH, 285(1-2), 17-23.
- . APPL PHYS LETT, 87(18).
- . J APPL PHYS, 98(8).
- . SEMICOND SCI TECH, 20(10), 1096-1102.
- . PHYS REV B, 72(16).
- . IEEE PHOTONIC TECH L, 17(10), 2011-2013.
- Broad-band Superluminescent Light Emitting Diodes Incorporating Quantum Dots in Compositionally Modulated Quantum Wells. Extended abstracts of the ... Conference on Solid State Devices and Materials, 2005, 96-97.
- . IEEE PHOTONIC TECH L, 17(9), 1785-1787.
- . PHYS REV B, 72(7).
- . PHYS REV B, 72(7).
- . APPL PHYS LETT, 87(3).
- . J APPL PHYS, 98(2).
- . PHYS REV B, 72(4).
- . THIN SOLID FILMS, 483(1-2), 185-190.
- . IEEE PHOTONIC TECH L, 17(6), 1139-1141.
- . APPL PHYS LETT, 86(19).
- . PHYS REV B, 71(19).
- . APPL PHYS LETT, 86(14).
- . J MAGN MAGN MATER, 292, 241-247.
- . J APPL PHYS, 97(7).
- . JPN J APPL PHYS 1, 44(4B), 2520-2522.
- . IEEE J QUANTUM ELECT, 41(3), 344-350.
- . APPL PHYS LETT, 86(6).
- Spin-memory and anomalous polarization properties of single InGaAs/GaAs quantum dots. Optics InfoBase Conference Papers.
- Engineering spin-polarization dynamics in InGaAs dot-in-a-well (DWELL) structures. Optics InfoBase Conference Papers.
- Ingaas-alassb quantum cascade lasers emitting at 4.4 μm. Optics InfoBase Conference Papers.
- Engineering spin-polarization dynamics in InGaAs dot-in-a-well (DWELL) structures. Optics InfoBase Conference Papers.
- . Proceedings of SPIE - The International Society for Optical Engineering, 5725, 309-317.
- . AIP Conference Proceedings, 772, 267-270.
- . AIP Conference Proceedings, 772, 977-978.
- . 2005 European Quantum Electronics Conference, EQEC '05, 2005, 325.
- . Physica Status Solidi C: Conferences, 2(8), 3163-3166.
- . Physica Status Solidi C: Conferences, 2(4), 1292-1297.
- . Proceedings of SPIE - The International Society for Optical Engineering, 5840 PART II, 486-497.
- . Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2005, 129-130.
- . 2005 European Quantum Electronics Conference, EQEC '05, 2005, 20.
- Spin-memory and anomalous polarization properties of single InGaAs/GaAs quantum dots. Quantum Electronics and Laser Science Conference (QELS), 1, 317-319.
- . Device Research Conference - Conference Digest, DRC, 2005, 71-72.
- Engineering spin-polarization dynamics in InGaAs dot-in-a-well (DWELL) structures. Quantum Electronics and Laser Science Conference (QELS), 3, 1938-1940.
- . J APPL PHYS, 97(1).
- . APPL PHYS LETT, 85(18), 4013-4015.
- . J APPL PHYS, 96(9), 5169-5172.
- . PHYS REV B, 70(19).
- . PHYS REV B, 70(20).
- . APPL PHYS LETT, 85(18), 3992-3994.
- . ELECTRON LETT, 40(22), 1412-1413.
- . PHYS REV B, 70(16).
- . APPL PHYS LETT, 85(12), 2226-2228.
- Growth, Fabrication, and Operating Characteristics of Ultra-Low Threshold 1.31μm Quantum Dot Lasers. Extended abstracts of the ... Conference on Solid State Devices and Materials, 2004, 80-81.
- . J CRYST GROWTH, 270(1-2), 62-68.
- . APPL PHYS LETT, 85(9), 1550-1552.
- . J APPL PHYS, 96(4), 1988-1992.
- . J PHYS-CONDENS MAT, 16(31), S3201-S3214.
- . APPL PHYS LETT, 85(5), 704-706.
- . Phys Rev Lett, 93(5), 057401.
- Influence of growth temperature on the structural and optical quality of GaInNAs/GaAs multi-quantum wells. SEMICOND SCI TECH, 19(7), 813-818.
- . J APPL PHYS, 95(12), 8466-8468.
- . J APPL PHYS, 95(12), 7584-7587.
- . OPT COMMUN, 235(4-6), 387-393.
- . PHYS REV B, 69(15).
- . APPL PHYS LETT, 84(9), 1447-1449.
- . J PHYS-CONDENS MAT, 16(6), 971-978.
- . PHYS REV B, 69(7).
- . J APPL PHYS, 95(3), 1036-1041.
- . Proceedings of SPIE - The International Society for Optical Engineering, 5452, 33-40.
- . Proceedings of SPIE - The International Society for Optical Engineering, 5452, 518-525.
- . Physica E: Low-Dimensional Systems and Nanostructures, 21(2-4), 892-896.
- Selective quantum well intermixing of 1.22 and 1.55μm GaInNAs laser material. OSA Trends in Optics and Photonics Series, 96 A, 625-626.
- . APPL PHYS LETT, 83(24), 4951-4953.
- . APPL PHYS LETT, 83(23), 4710-4712.
- . PHYS REV B, 68(23).
- . APPL PHYS LETT, 83(18), 3716-3718.
- . APPL PHYS LETT, 83(15), 3111-3113.
- . APPL PHYS LETT, 83(14), 2808-2810.
- A ballistic electron emission microscopy study of ferromagnetic thin films embedded in Au/GaAs(100). J PHYS-CONDENS MAT, 15(38), 6485-6492.
- . PHILOS MAG, 83(27), 3077-3092.
- . PHYS REV LETT, 91(12).
- . J APPL PHYS, 94(5), 3222-3228.
- . J APPL PHYS, 94(4), 2631-2637.
- . P ROY SOC LOND A MAT, 459(2036), 2049-2068.
- The effect of dead space on gain and excess noise in In0.48Ga0.52P p(+)in(+) diodes. SEMICOND SCI TECH, 18(8), 803-806.
- . APPL PHYS LETT, 83(4), 602-604.
- . PHYS REV B, 68(3).
- . APPL PHYS LETT, 83(2), 290-292.
- . APPL PHYS LETT, 82(21), 3758-3760.
- . APPL PHYS LETT, 82(21), 3644-3646.
- . APPL PHYS LETT, 82(20), 3409-3411.
- . APPL PHYS LETT, 82(20), 3415-3417.
- . J APPL PHYS, 93(7), 3881-3885.
- . J APPL PHYS, 93(6), 3524-3528.
- . J APPL PHYS, 93(5), 2931-2936.
- A comparison of the overall radiative efficiency of DWELL, standard QD and QW laser structures. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 1, 120-121.
- Effect of temperature on the avalanche properties of sub-micron structures. Institute of Physics Conference Series, 174, 263-266.
- . APPL PHYS LETT, 81(26), 4904-4906.
- . J APPL PHYS, 92(12), 7684-7686.
- . IEEE T ELECTRON DEV, 49(12), 2349-2351.
- . APPL PHYS LETT, 81(22), 4118-4120.
- . ELECTRON LETT, 38(24), 1539-1541.
- . APPL PHYS LETT, 81(17), 3251-3253.
- . PHYS REV B, 66(15).
- . APPL PHYS LETT, 81(9), 1708-1710.
- . APPL PHYS LETT, 81(8), 1378-1380.
- . PHYS REV B, 66(8).
- . APPL PHYS LETT, 81(1), 1-3.
- . Applied Surface Science, 190(1-4), 258-263.
- Excess noise characteristics of Al0.8Ga0.2As avalanche photodiodes. IEEE PHOTONIC TECH L, 14(4), 522-524.
- . APPL PHYS LETT, 80(9), 1541-1543.
- . ELECTRON LETT, 38(2), 75-77.
- . PHYS REV B, 65(3).
- Differential-gain damping in quantum dot lasers due to wetting layer states. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 1, 23-24.
- Self-sustained Q-switching in InGaAs quantum dot lasers. Conference Digest - IEEE International Semiconductor Laser Conference, 75-76.
- Structural and optical studies of vertically aligned InAs/GaAs self-assembled quantum dots. J APPL PHYS, 90(12), 6374-6378.
- Temperature dependence of the lasing wavelength of InGaAs quantum dot lasers. J APPL PHYS, 90(9), 4859-4861.
- lambda=8.3 mu m GaAs/AlAs quantum cascade lasers incorporating InAs monolayers. ELECTRON LETT, 37(21), 1292-1293.
- . IEE P-OPTOELECTRON, 148(5-6), 238-242.
- . IEE P-OPTOELECTRON, 148(5-6), 243-246.
- Avalanche multiplication characteristics of Al0.8Ga0.2As diodes. IEEE T ELECTRON DEV, 48(10), 2198-2204.
- Electrically pumped InGaAs quantum dot ring and cylindrical cavity lasers. ELECTRON LETT, 37(20), 1220-1222.
- Indium segregation in (111)B GaAs-InxGa1-xAs quantum wells determined by transmission electron microscopy. J PHYS D APPL PHYS, 34(13), 1943-1946.
- Intensity noise in quantum-dot laser diodes. APPL PHYS LETT, 78(23), 3577-3579.
- Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition. J APPL PHYS, 89(9), 4689-4696.
- Optical mode loss and gain of multiple-layer quantum-dot lasers. APPL PHYS LETT, 78(18), 2629-2631.
- Enhanced phonon-assisted absorption in single InAs/GaAs quantum dots. PHYS REV B, 63(16).
- Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot. PHYS REV B, 63(16).
- . APPL PHYS A-MATER, 72, S205-S207.
- . Phys Rev Lett, 86(11), 2381-2384.
- Thermodynamic balance in quantum dot lasers. SEMICOND SCI TECH, 16(3), 140-143.
- Optical spectroscopic study of carrier processes in self-assembled In(Ga)As-Ga(Al)As quantum dot lasers. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 224(1), 123-127.
- Temperature Dependent Optical Properties of InAs/AlGaAs Quantum Dots. physica status solidi (b), 224(1), 107-110.
- Charged and neutral exciton complexes in individual self-assembled In(Ga)As quantum dots. PHYS REV B, 6307(7).
- Decreasing the emission wavelength of GaAs-AlGaAs quantum cascade lasers by the incorporation of ultrathin InGaAs layers. APPL PHYS LETT, 78(4), 413-415.
- The nature of islanding in the InGaAs/GaAs epitaxial system. Materials Research Society Symposium - Proceedings, 648, P1261-P1266.
- Fermi-edge singularities in a one-dimensional electron system in magnetic field. SOLID STATE COMMUN, 119(1), 55-58.
- Electric-field-dependent carrier capture and escape in self-assembled InAs/GaAs quantum dots. APPL PHYS LETT, 77(26), 4344-4346.
- Impact ionization coefficients of Al0.8Ga0.2As. APPL PHYS LETT, 77(26), 4374-4376.
- Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots. PHYS REV B, 62(24), 16784-16791.
- . Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088).
- . Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088).
- Modal gain and internal optical mode loss of a quantum dot laser. APPL PHYS LETT, 77(2), 163-165.
- General characteristics of crack arrays in epilayers grown under tensile strain. SEMICOND SCI TECH, 15(4), 325-330.
- Improved performance from GaAs-AlGaAs quantum cascade lasers with enhanced upper laser level confinement. PHYSICA E, 7(1-2), 8-11.
- Electronic structure of InAs-GaAs self-assembled quantum dots studied by perturbation spectroscopy. PHYSICA E, 6(1-4), 348-357.
- . Phys Rev Lett, 84(4), 733-736.
- . Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088).
- GaAs-AlGaAs and InGaAs-InAlAs quantum cascade lasers. Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 267.
- Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers. J APPL PHYS, 87(1), 615-617.
- Gain characteristics of InAs/GaAs self-organized quantum-dot lasers. APPL PHYS LETT, 75(22), 3512-3514.
- Comparison of performance of GaAs-AlGaAs and InGaAs-AlInAs quantum cascade lasers. ELECTRON LETT, 35(23), 2034-2036.
- Relaxation study of InxGa1-xAs/GaAs quantum-well structures grown by MBE on (001) and (111)B GaAs for long wavelength applications. J CRYST GROWTH, 206(4), 287-293.
- Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots. J APPL PHYS, 86(5), 2555-2561.
- Excited states and selection rules in self-assembled InAs/GaAs quantum dots. PHYS REV B, 60(4), R2185-R2188.
- Avalanche multiplication and breakdown in Ga0.52In0.48P diodes. IEEE T ELECTRON DEV, 45(10), 2096-2101.
- Structural and morphological characteristics of InGaAs/GaAs quantum well structures on tilted (1 1 1)B GaAs grown by MBE. J CRYST GROWTH, 192(3-4), 363-371.
- Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers. APPL PHYS LETT, 73(7), 969-971.
- 2.7 mu m LEDs for water vapour detection grown by MBE on InP. ELECTRON LETT, 34(16), 1606-1607.
- Optical monitoring of InP monolayer growth rates. APPL PHYS LETT, 73(3), 345-347.
- Phase-matched second harmonic generation in asymmetric double quantum wells. APPL PHYS LETT, 72(21), 2654-2656.
- Mid-infrared intersubband electroluminescence from a single-period GaAs/AlGaAs triple barrier structure. APPL PHYS LETT, 72(17), 2141-2143.
- Photoluminescence spectroscopy of intersubband population inversion in a GaAs/AlxGa1-xAs triple-barrier tunneling structure. PHYS REV B, 57(11), 6290-6293.
- Optical properties of (AlxGa1-x)(0.52)In0.48P at the crossover from a direct-gap to an indirect-gap semiconductor. J APPL PHYS, 83(4), 2241-2249.
- 1.3 mu m InAsP quantum well lasers grown by solid source MBE. IEE P-OPTOELECTRON, 145(1), 3-6.
- Magneto-optical studies of self-organized InAs/GaAs quantum dots. PHYS REV B, 57(4), R2073-R2076.
- . Applied Physics Letters, 73(13), 1898-1900.
- Investigation of dalta-doped quantum wells for power FET applications. Superlattices and Microstructures, 23(2).
- Carrier lifetime and exciton saturation in a strain-balanced InGaAs/InAsP multiple quantum well. J APPL PHYS, 83(1), 306-309.
- Reflectance anisotropy spectroscopy study of the surface reconstructions of decapped InP(001). J APPL PHYS, 83(1), 480-485.
- Investigation of delta-doped quantum wells for power FET applications. SUPERLATTICE MICROST, 23(2), 187-190.
- In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy. J APPL PHYS, 82(1), 474-476.
- Impact ionization coefficients in GaInP p-i-n diodes. APPL PHYS LETT, 70(26), 3567-3569.
- Coherency strain as an athermal strengthening mechanism. PHYS REV LETT, 78(20), 3912-3914.
- As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy. APPL PHYS LETT, 70(11), 1423-1425.
x Ga1-x )0.52 In0.48 P p-i-n diodes. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, 256-260.
Breakdown characteristics of (Al- Investigation of band non-parabolicities in strain-balanced GaInAs/GaAlInAs coupled quantum wells. SUPERLATTICE MICROST, 22(4), 517-520.
- . Phys Rev B Condens Matter, 54(24), 17738-17744.
- Crack formation in III-V epilayers grown under tensile strain on InP(001) substrates. PHILOS MAG A, 74(2), 383-393.
- Voltage enhancement in quantum well solar cells. J APPL PHYS, 80(2), 1201-1206.
- Optical spectroscopic observation of spontaneous long range ordering in AlGaInP. APPL PHYS LETT, 68(23), 3266-3268.
- Low-temperature mobility of two-dimensional electrons in (Ga,In)As-(Al,In)As heterojunctions. J APPL PHYS, 79(11), 8465-8469.
- Mobility and saturation drift velocity enhancement in highly doped GaAs and InxGa1-xAs structures designed for use in power FET devices. ELECTRON LETT, 32(5), 494-496.
- Study of a backgated metal-semiconductor-metal photodetector. APPL PHYS LETT, 68(6), 815-817.
- Photoconductivity studies of InAsP/InP heterostructures in applied magnetic and electric fields. SEMICOND SCI TECH, 11(1), 34-38.
- Enhanced mobility piezoelectric AlInAs/InGaAs quantum well structures on (111)B InP substrates. ELECTRON LETT, 31(25), 2215-2216.
- InxGa1-xAs/InP quantum well structures grown on [111]B InP. MICROELECTR J, 26(8), 805-810.
- . Phys Rev B Condens Matter, 52(20), 14340-14343.
- A COMPARISON OF 1.55 MU-M DISTRIBUTED-BRAGG-REFLECTOR STACKS FOR USE IN MULTIQUANTUM-WELL MICRO-RESONATOR MODULATORS. SEMICOND SCI TECH, 10(9), 1283-1286.
- GROWTH OF INASXP1-X/INP MULTIQUANTUM-WELL STRUCTURES BY SOLID SOURCE MOLECULAR-BEAM EPITAXY. J APPL PHYS, 78(5), 3330-3334.
- APPLICATION OF ANODIC-OXIDATION FOR POSTGROWTH TAILORING OF INGAASP/INP ASYMMETRIC FABRY-PEROT MODULATOR REFLECTION SPECTRA. ELECTRON LETT, 31(14), 1186-1187.
- BAND-GAP OF COMPLETELY DISORDERED GA0.52IN0.48P. APPL PHYS LETT, 66(23), 3185-3187.
- CONDUCTION-BAND DISCONTINUITIES IN GA0.5IN0.5P-ALXGA0.5-XIN0.5P HETEROJUNCTIONS MEASURED BY INTERNAL PHOTOEMISSION. APPL PHYS LETT, 66(21), 2852-2854.
- DELTA-DOPING-ENHANCED INGAAS/INALAS HETEROBARRIER DIODES. ELECTRON LETT, 31(6), 493-494.
- GALNP-ALGALNP BAND OFFSETS DETERMINED FROM HYDROSTATIC-PRESSURE MEASUREMENTS. APPL PHYS LETT, 66(5), 619-621.
x Ga1-x As/InP multiquantum well structures grown on [111]B InP substrates. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 299-302.
In- . Phys Rev B Condens Matter, 50(15), 11190-11191.
- ELECTROABSORPTION MODULATION IN STRAINED PIEZOELECTRIC INGAAS/INP MULTIQUANTUM WELLS OPERATING AT LAMBDA-SIMILAR-OR-EQUAL-TO-1.55 MU-M. ELECTRON LETT, 30(20), 1707-1708.
- HIGHLY DOPED 1.55-MU-M GAXIN1-XAS/INP DISTRIBUTED-BRAGG-REFLECTOR STACKS. ELECTRON LETT, 30(18), 1526-1527.
- ELECTRONIC BAND-STRUCTURE OF ALGAINP GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY. APPL PHYS LETT, 65(2), 213-215.
- AVALANCHE BREAKDOWN IN (AL(X)GA(1X))0.52IN0.48P PIN JUNCTIONS. ELECTRON LETT, 30(11), 907-909.
- MAGNETIC-FIELD EFFECTS ON INP INGAAS QUASI-BALLISTIC HETEROJUNCTION BIPOLAR-TRANSISTORS. SEMICOND SCI TECH, 9(5), 1153-1155.
- SOLID-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF GAINP AND GAINP-CONTAINING QUANTUM-WELLS. J APPL PHYS, 75(4), 2029-2034.
- Reverse breakdown characteristics in InGa(Al)P/InGaP p-i-n junctions. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 403-406.
- OPTICAL SPECTROSCOPY OF ALGAINP BASED WIDE-BAND GAP QUANTUM-WELLS. SUPERLATTICE MICROST, 15(3), 313-316.
- HIGH REFLECTIVITY AND LOW-RESISTANCE 1.55-MU-M AL0.65IN0.35AS/GA0.63IN0.37AS STRAINED QUARTER-WAVE BRAGG REFLECTOR STACK. ELECTRON LETT, 29(22), 1947-1948.
- GUIDED-WAVE MEASUREMENTS OF REAL-EXCITATION OPTICAL NONLINEARITIES IN A TENSILE-STRAINED INGAAS ON INP QUANTUM-WELL AT 1.5 MU-M. OPT COMMUN, 102(5-6), 473-477.
- OPTICAL BISTABILITY IN AN INGAAS/INP MULTIPLE-QUANTUM-WELL WAVE-GUIDE FABRY-PEROT CAVITY. APPL PHYS LETT, 63(12), 1610-1612.
- TRANSIENT PHOTOLUMINESCENCE IN GAINAS/INP MULTIPLE-QUANTUM WELLS. SEMICOND SCI TECH, 8(9), 1758-1763.
- SUBMILLIWATT OPTICAL BISTABILITY IN A COATED INGAAS/INP MULTIQUANTUM-WELL WAVE-GUIDE FABRY-PEROT CAVITY. ELECTRON LETT, 29(17), 1537-1539.
- PHOTOLUMINESCENCE, PHOTOLUMINESCENCE EXCITATION, AND RESONANT RAMAN-SPECTROSCOPY OF DISORDERED AND ORDERED GA0.52IN0.48P. J APPL PHYS, 73(10), 5163-5172.
- MICROSTRUCTURE AND CATHODOLUMINESCENCE OF MBE-GROWN (001) INXGA1-XP/GAAS STRAINED-LAYER HETEROSTRUCTURES. SEMICOND SCI TECH, 8(4), 502-508.
- CARRIER LIFETIMES IN MBE AND MOCVD INGAAS QUANTUM-WELLS. SEMICOND SCI TECH, 8(2), 307-309.
- . Applied Physics Letters, 63(1), 4-6.
- Growth and characterisation of InAsP/InP SQW and MQW PIN diode structures. 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials, 167-170.
- PASSIVELY MODE-LOCKED ER3+ FIBER LASER USING A SEMICONDUCTOR NONLINEAR MIRROR. IEEE PHOTONIC TECH L, 5(1), 35-37.
- ASYMMETRIC CHARACTERISTICS OF INGAP/GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY. SEMICOND SCI TECH, 7(3), 425-428.
- GROWTH OF STRAINED INAS/INP QUANTUM-WELLS BY MOLECULAR-BEAM EPITAXY. APPL PHYS LETT, 60(7), 841-843.
- CONDUCTION-BAND DISCONTINUITY IN INGAP/GAAS MEASURED USING BOTH CURRENT-VOLTAGE AND PHOTOEMISSION METHODS. APPL PHYS LETT, 60(4), 474-476.
- QUASI-BALLISTIC ELECTRON-TRANSPORT IN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS. ELECTRON LETT, 28(2), 145-147.
- ON THE LOW-TEMPERATURE EFFICIENCY OF PHOTOLUMINESCENCE IN A-SI-H AND OTHER MATERIALS. PHILOS MAG B, 63(1), 179-191.
- . JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 8(1), 21-27.
- . Thin Solid Films, 184(1-2), 15-19.
- Transport and related properties of InP based HBTs. IEE Colloquium (Digest)(111).
- PHOTOLUMINESCENCE PROPERTIES OF A-(SI/SIN)-H MULTILAYERS - A COMPARISON WITH BULK ALLOYS. J NON-CRYST SOLIDS, 97-8, 883-886.
- THE EFFECT OF SUBSTRATE-TEMPERATURE ON DEEP STATES IN MBE SILICON. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 134(8B), C545-C545.
- CHARACTERIZATION OF ABRUPT P-N-JUNCTIONS PREPARED BY SILICON MBE. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 134(8B), C547-C547.
- RECOMBINATION IN a-Si:H BASED MATERIALS: EVIDENCE FOR TWO SLOW RADIATIVE PROCESSES.. Disord Semicond.
- ELECTRICAL, OPTICAL AND LUMINESCENCE PROPERTIES OF A-SI/SIN MULTILAYERS. J NON-CRYST SOLIDS, 77-8, 1081-1084.
- A COMPARISON OF PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN A-SI P-I-N JUNCTIONS. J NON-CRYST SOLIDS, 77-8, 695-698.
- . Journal of Laser Micro/Nanoengineering.
- , 3071-3071.
- , 3243-3243.
- . Nanophotonics, 0(0).
- . Journal of Laser Micro/Nanoengineering.
- . Physical Review B, 101(20).
- . Phys. Rev. B, 88, 045306.
- . Nature Physics, 9, 74-78.
- . Nature Nanotechnology, 7, 646.
- . Optics Express.
Chapters
- , Microscopy of Semiconducting Materials 2003 (pp. 143-146). CRC Press
- , Quantum Dot Devices (pp. 197-221). Springer New York
- , Quantum Dot Devices (pp. 93-108). Springer New York
- Nitrides And Dilute Nitrides: Growth, Physics And Devices
- , Intersubband Transitions in Quantum Wells: Physics and Devices (pp. 22-29). Springer US
- CRC Press
- , Dilute III-V Nitride Semiconductors and Material Systems (pp. 199-221). Springer Berlin Heidelberg
- , EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany (pp. 119-120). Springer Berlin Heidelberg
Conference proceedings papers
- . 2023 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 31 July 2023 - 4 August 2023.
- . Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII, 1 February 2020 - 6 February 2020.
- . Physics and Simulation of Optoelectronic Devices XXVIII, 1 February 2020 - 6 February 2020.
- . Laser-based Micro- and Nanoprocessing XIV, 1 February 2020 - 6 February 2020.
- . Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXV, 1 February 2020 - 6 February 2020.
- . 2018 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 13 August 2018 - 17 August 2018.
- . 2018 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 13 August 2018 - 17 August 2018.
- . 2014 16th International Conference on Transparent Optical Networks (ICTON), 6 July 2014 - 10 July 2014.
- Quantum dot nucleation on focused ion beam patterned GaAs substrates. 15th European Microscopy Congress, Vol. 1(Physical Sciences: Applications) (pp 927-928). Oxford, 16 September 2012 - 21 September 2012.
- Study of controlled quantum dot formation on focused ion beam patterned GaAs substrates. IEEE-Nano2012, Vol. digital abstract booklet (pp 716-718). London, 20 August 2012 - 23 August 2012.
- . 2011 IEEE Photonics Society Summer Topical Meeting Series (pp 57-58)
- Short wavelength InP based quantum cascade lasers. Optics InfoBase Conference Papers
- Short wavelength InP based quantum cascade lasers. Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
- . MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, Vol. 165(1-2) (pp 88-93)
- Fine Structure of the Localized Emission from GaInNAs Layers Studied by Micro-Photoluminescence. ACTA PHYSICA POLONICA A, Vol. 116(5) (pp 930-932)
- . PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 246(4) (pp 717-720)
- . MICROELECTRONICS JOURNAL, Vol. 40(4-5) (pp 838-840)
- . PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 246(4) (pp 824-827)
- . MICROELECTRONICS JOURNAL, Vol. 40(3) (pp 533-536)
- GaAs Based Quantum Dot Superluminescent Diodes for Optical Coherence Tomography of Skin Tissue. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 426-431)
- Broad-band High Power Quantum Dot Superluminescent Diodes. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 604-605)
- Optical coherence tomography with high power quantum-dot superluminescent diodes. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 207-208)
- . JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol. 20 (pp 116-119)
- Room Temperature InGaAs-AlAsSb Quantum Cascade Lasers Operating in 3-4 mu m Range. 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 (pp 844-845)
- Picosecond Coherent Control of Dressed States in a Single Quantum Dot. 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 (pp 2371-2372)
- . OPTICAL AND QUANTUM ELECTRONICS, Vol. 40(14-15) (pp 1143-1148)
- . Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 23 September 2008 - 26 September 2008.
- . Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 23 September 2008 - 26 September 2008.
- . Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 23 September 2008 - 26 September 2008.
- . Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 23 September 2008 - 26 September 2008.
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 40(6) (pp 1988-1990)
- . 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6909
- Growth and in vivo STM of III-V Compound Semiconductors. MICROSCOPY OF SEMICONDUCTING MATERIALS 2007, Vol. 120 (pp 471-476)
- . PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 205(1) (pp 85-92)
- DARK CURRENT MECHANISMS IN BULK GaInNAs PHOTODIODES. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 345-348)
- Tuning and Modulation in Two Section Quantum Dot Lasers. 2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), VOLS 1 AND 2 (pp 93-96)
- 1.3 mu m Quantum Dot Self-Aligned Stripe Laser. 2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), VOLS 1 AND 2 (pp 97-100)
- Multi-Contact Quantum Dot Superluminescent Diodes for Optical Coherence Tomography. 2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), VOLS 1 AND 2 (pp 104-106)
- High power, broad spectral width, 1300nm Quantum-Dot Superluminescent Diodes. 2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (pp 23-24)
- Two Section Quantum Dot Devices for Tuning and Modulation. 2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (pp 109-110)
- Investigating the Capping of InAs Quantum Dots by InGaAs. MICROSCOPY OF SEMICONDUCTING MATERIALS 2007, Vol. 120 (pp 259-262)
- Comparing InGaAs and GaAsSb Metamorphic Buffer Layers on GaAs Substrates for InAs Quantum Dots Emitting at 1.55 mu m. MICROSCOPY OF SEMICONDUCTING MATERIALS 2007, Vol. 120 (pp 263-268)
- Multi-Contact Quantum Dot Superluminescent Diodes for Optical Coherence Tomography. 2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (pp 107-108)
- Coupled Resonant Modes of Dual L3-Defect Planar Photonic Crystal Cavities. 2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 (pp 3020-3021)
- Controlled-Rotation Quantum Logic Gate in a Single Self-Assembled Quantum Dot. 2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 (pp 3175-3176)
- Whispering Gallery Modes in Quantum Dot Micropillar Cavities. 2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 (pp 1722-1723)
- Short-wavelength quantum cascade lasers - art. no. 69090V. NOVEL IN-PLANE SEMICONDUCTOR LASERS VII, Vol. 6909 (pp V9090-V9090)
- Effects of spacer growth temperature on the optical properties of quantum dot laser structures - art. no. 68000U. DEVICE AND PROCESS TECHNOLOGIES FOR MICROELECTRONICS, MEMS, PHOTONICS AND NANOTECHNOLOGY IV, Vol. 6800 (pp U8000-U8000)
- . JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, Vol. 316(2) (pp E52-E55)
- . JOURNAL OF APPLIED PHYSICS, Vol. 101(8)
- . JOURNAL OF CRYSTAL GROWTH, Vol. 301 (pp 552-555)
- . THIN SOLID FILMS, Vol. 515(10) (pp 4430-4434)
- . Conference on Lasers and Electro-Optics, 2007, CLEO 2007
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6603
- . Conference on Lasers and Electro-Optics Europe - Technical Digest
- Very low-threshold-current-density 1.34-mu m GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure. 2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 (pp 2362-2363)
- . JOURNAL OF MODERN OPTICS, Vol. 54(12) (pp 1677-1683)
- InGaAs-AlAsSb Quantum Cascade Lasers: Towards 3 mu m Emission. 2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 (pp 492-493)
- Photon Coupling Mechanism in 1.3-mu m Quantum-Dot Lasers. 2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 (pp 2340-2341)
- Identifying the origin of non-radiative recombination in ln(Ga)As quantum dot lasers. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 429-430)
- Short wavelength InGaAs-AlAsSb-InP quantum cascade lasers. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 705-706)
- Growth and characterization of multi-layer 1.3 mu m quantum dot lasers. INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 6, NOS 3 AND 4, Vol. 6(3-4) (pp 291-296)
- Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp H7400-H7400)
- The effects of monolayer thickness and sheet doping density on dark current and noise current in Quantum Dot Infrared Photodetectors - art. no. 67400J. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp J7400-J7400)
- . JOURNAL OF MODERN OPTICS, Vol. 54(12) (pp 1717-1722)
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6468
- Systematic study of the effects of modulation p-doping on 1.3 mu m InAs/GaAs dot-in-well lasers. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 517-520)
- Quantum dot superluminescent diodes - Bandwidth engineering and epitaxy for high powers. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 289-292)
- Gainnas lattice-matched to GaAs for photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 347-349)
- Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots. Physics of Semiconductors, Pts A and B, Vol. 893 (pp 951-952)
- . IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 153(6) (pp 280-283)
- . IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 153(6) (pp 316-320)
- . APPLIED SURFACE SCIENCE, Vol. 252(19) (pp 7218-7220)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 32(1-2) (pp 500-503)
- . Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
- . Conference Digest - IEEE International Semiconductor Laser Conference (pp 47-48)
- . Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
- . Semiconductor Lasers and Laser Dynamics II, Vol. 6184 (pp D1840-D1840)
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6133
- 1.3 mu m emitting, self assembled quantum dot lasers. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 867-867)
- Excess noise and avalanche multiplication in InAlAs. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 787-788)
- . Electro-Optical and Infrared Systems: Technology and Applications III, Vol. 6395 (pp U102-U110)
- . Semiconductor Lasers and Laser Dynamics II, Vol. 6184 (pp 18417-18417)
- . Quantum Dots, Particles, and Nanoclusters III, Vol. 6129 (pp 12907-12907)
- . Quantum Dots, Particles, and Nanoclusters III, Vol. 6129 (pp G1290-G1290)
- . MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, Vol. 25(5-8) (pp 793-797)
- . MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, Vol. 25(5-8) (pp 779-783)
- . MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, Vol. 25(5-8) (pp 798-803)
- . JOURNAL OF OPTICS A-PURE AND APPLIED OPTICS, Vol. 7(6) (pp S270-S275)
- . APPLIED SURFACE SCIENCE, Vol. 244(1-4) (pp 65-70)
- . JOURNAL OF CRYSTAL GROWTH, Vol. 278(1-4) (pp 151-155)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 436-440)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 382-385)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 408-412)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 129-132)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 245-251)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 302-307)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 105-109)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 124-128)
- Defect generation in high In and N content GaInNAs quantum wells: unfaulting of Frank dislocation loops. Microscopy of Semiconducting Materials, Vol. 107 (pp 139-142)
- Activation energy for surface diffusion in GaInNAs quantum wells. MICROSCOPY OF SEMICONDUCTING MATERIALS, Vol. 107 (pp 279-282)
- Vertical correlation-anticorrelation transition in InAs/GaAs quantum dot structures grown by molecular beam epitaxy. Microscopy of Semiconducting Materials, Vol. 107 (pp 251-254)
- Microstructural studies of InAs/GaAs self-assembled quantum dots grown by selective area molecular beam epitaxy. Microscopy of Semiconducting Materials, Vol. 107 (pp 267-270)
- Effect of annealing on anticorrelated InGaAs/GaAs quantum dots. Microscopy of Semiconducting Materials, Vol. 107 (pp 255-258)
- Structural analysis of the effects of a combined InAlAs-InGaAs capping layer in 1.3-mu m InAs quantum dots. Microscopy of Semiconducting Materials, Vol. 107 (pp 263-266)
- . Novel In-Plane Semiconductor Lasers IV, Vol. 5738 (pp 332-346)
- Electronic coupling between self-assembled quantum dots tuned by high pressure. PHYSICS OF SEMICONDUCTORS, PTS A AND B, Vol. 772 (pp 687-688)
- InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 mu m. 2005 Conference on Lasers & Electro-Optics (CLEO), Vols 1-3 (pp 248-250)
- The mechanism of the Stranski-Krastanov transition. Quantum Dots: Fundamentals, Applications, and Frontiers, Vol. 190 (pp 71-88)
- InGaAs-AlAsSb-InP quantum cascade lasers: Performance and prospects. 2005 International Conference on Indium Phosphide and Related Materials (pp 76-77)
- Growth and characterization of 1.3 mu m multi-layer quantum dots lasers incorporating high growth temperature spacer layers. Physics of Semiconductors, Pts A and B, Vol. 772 (pp 1547-1548)
- . PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 241(14) (pp 3257-3262)
- . IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 271-274)
- . IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 301-304)
- . IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 385-388)
- . IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 331-334)
- . SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol. 19(4) (pp S316-S318)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 21(2-4) (pp 199-203)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 21(2-4) (pp 405-408)
- . Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies, 2004.
- Segregation in compound semiconductors: the Stranski-Krastanow epitaxial transition and electron beam damage processes. 13th European Microscopy Congress (EMC 2004), Vol. 2 (Materials Sciences) (pp 417-418). Herentals, 22 August 2004 - 27 August 2004.
- Long-lived spin coherence and temperature-induced dephasing in InAs quantum dots measured via quantum beats. OSA Trends in Optics and Photonics Series, Vol. 97 (pp 667-668)
- . Device Research Conference - Conference Digest, DRC (pp 79-80)
- Composition modulation and growth-associated defects in GaInNAs/GaAs multi quantum wells. ELECTRON MICROSCOPY AND ANALYSIS 2003(179) (pp 103-106)
- Improved gain and loss performance of 1.3 mu m quantum dot lasers using high growth temperature GaAs Spacer layer. 2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 212-213)
- Carrier distribution, spontaneous emission and gain in self assembled quantum dot lasers. NOVEL IN-PLANE SEMICONDUCTOR LASERS III, Vol. 5365 (pp 86-95)
- 1.55-mu m GaInNAs/GaAs multiple quantum wells with GaInNAs quaternary barrier and space layer. SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials (pp 189-193)
- . 11TH INTERNATIONAL CONFERENCE ON PHONON SCATTERING IN CONDENSED MATTER, PROCEEDINGS (pp 2613-2616)
- . 11TH INTERNATIONAL CONFERENCE ON PHONON SCATTERING IN CONDENSED MATTER, PROCEEDINGS (pp 2686-2689)
- . ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS VIII, Vol. 5352 (pp 348-354)
- Optimisation of the optical emission of bilayers of quantum dots. MICROSCOPY OF SEMICONDUCTING MATERIALS 2003(180) (pp 103-106)
- Characterization of InGaAs (N)/GaAsN multi-quantum wells using transmission electron microscopy. MICROSCOPY OF SEMICONDUCTING MATERIALS 2003(180) (pp 143-146)
- . PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 238(2) (pp 341-344)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 17(1-4) (pp 526-532)
- . Frontiers in Optics, 2003.
- Carrier distribution and self heating in quantum dot and quantum well lasers. OSA Trends in Optics and Photonics Series, Vol. 88 (pp 684-685)
- Effect of temperature on the avalanche properties of sub-micron structures. COMPOUND SEMICONDUCTORS 2002, Vol. 174 (pp 263-266)
- Direct composition proriling in III-V nanostructures by cross-sectional STM. PHYSICS OF SEMICONDUCTORS 2002, PROCEEDINGS, Vol. 171 (pp 77-84)
- The effect of intervalley scattering on the performance of GaAs-AlAs quantum cascade lasers. PHYSICS OF SEMICONDUCTORS 2002, PROCEEDINGS, Vol. 171 (pp 117-123)
- Carrier Distribution and Self Heating in Quantum Dot and Quantum Well Lasers. Optics InfoBase Conference Papers
- The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures. MICROELECTRONICS JOURNAL, Vol. 33(7) (pp 559-563)
- Characterisation of strained (111)B InGaAs/GaAs quantum well lasers with intracavity optical modulator. MICROELECTRONICS JOURNAL, Vol. 33(7) (pp 547-552)
- Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 mu m operation. MICROELECTRONICS JOURNAL, Vol. 33(7) (pp 553-557)
- . Nonlinear Optics: Materials, Fundamentals and Applications, 2002.
- Strategies for reducing the emission wavelength of GaAs-AlAs quantum cascade lasers. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 13(2-4) (pp 835-839)
- Optical properties of single charge tuneable InGaAs quantum dots. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 13(2-4) (pp 127-130)
- Epitaxial island growth and the Stranski-Krastanow transition. CURRENT ISSUES IN HETEROEPITAXIAL GROWTH-STRESS RELAXATION AND SELF ASSEMBLY, Vol. 696 (pp 3-10)
- Analysis of quantum dot dynamics via q-switching. Optics InfoBase Conference Papers (pp 334-336)
- . Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170), 11 May 2001 - 11 May 2001.
- . Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170), 11 May 2001 - 11 May 2001.
- Effect of graded buffer design on the defect structure in InGaAs/GaAs (111)B heterostructures. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 80(1-3) (pp 27-31)
- Temperature dependent optical properties of InAs/AlGaAs quantum dots. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 224(1) (pp 107-110)
- Recombination of many-particle states in InAs self-organized quantum dots. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 224(2) (pp 409-412)
- Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 224(2) (pp 497-502)
- Excitation and relaxation mechanisms in single In(Ga)As quantum dots. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 224(2) (pp 373-378)
- Bandgap renormalization and carrier relaxation in self-organized InAs quantum dots. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, Vol. 87 (pp 1131-1132)
- (pp 359-360)
- Barrier thickness influence on plastic relaxation in (111)B misoriented InGaAs/GaAs double quantum wells. MICROSCOPY OF SEMICONDUCTING MATERIALS 2001(169) (pp 133-136)
- Strain relaxation behaviour in InxGa1-xAs quantum wells on misorientated GaAs (111)B substrates. MICROSCOPY OF SEMICONDUCTING MATERIALS 2001(169) (pp 137-140)
- How InGaAs islands form on GaAs substrates: the missing link in the explanation of the Stranski-Krastanow transition. MICROSCOPY OF SEMICONDUCTING MATERIALS 2001(169) (pp 85-88)
- Optical spectroscopy of single InAs quantum dots: excitation and relaxation mechanisms. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, Vol. 87 (pp 1195-1196)
- Avalanche multiplication noise in bulk and thin AlxGa1-xAs (x=0-0.8) PIN and NIP diodes. PHOTODETECTORS: MATERIALS AND DEVICES VI, Vol. 4288 (pp 39-46)
- Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy. PHYSICA E, Vol. 9(1) (pp 106-113)
- Optical mode loss and gain of multiple layer quantum dot lasers. Optics InfoBase Conference Papers
- Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers. Optics InfoBase Conference Papers
- Electronic properties of InAs/GaAs self-assembled quantum dot structures and devices studied by photocurrent spectroscopy. ACTA PHYSICA POLONICA A, Vol. 98(3) (pp 279-293)
- InAs-GaAs self-assembled quantum dot lasers: physical processes and device characteristics. PHYSICA E, Vol. 7(3-4) (pp 489-493)
- Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: observation of a permanent dipole moment. PHYSICA E, Vol. 7(3-4) (pp 408-412)
- Static and growing InP and InAs surfaces: reflection-anisotropy spectroscopy under the conditions of solid-source MBE. THIN SOLID FILMS, Vol. 364(1-2) (pp 6-11)
- Quantum confined Stark effect and permanent dipole moment of InAs-GaAs self-assembled quantum dots. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 178(1) (pp 269-275)
- Dynamical band gap renormalization in self-organized InAs/GaAs quantum dots. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 178(1) (pp 345-348)
- Low avalanche noise behaviour in bulk Al0.8Ga0.2As. 2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 519-523)
- The stark effect and electron-hole wavefunctions in InAs-GaAs self-assembled quantum dots. OPTICAL PROPERTIES OF SEMICONDUCTOR NANOSTRUCTURES, Vol. 81 (pp 337-346)
- Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: Observation of a permanent dipole moment. SEMICONDUCTOR QUANTUM DOTS, Vol. 571 (pp 147-152)
- Many-body effects in carrier capture and energy relaxation in self-organized InAs/GaAs quantum dots. PHYSICA B, Vol. 272(1-4) (pp 12-14)
- Optical properties of InxGa1-xAs/GaAs MQW structures on (111)B GaAs grown by MBE: dependence on substrate miscut. JOURNAL OF CRYSTAL GROWTH, Vol. 202 (pp 1085-1088)
- Influence of substrate misorientation on the structural characteristics of InGaAs GaAs MQW on (111)B GaAs grown by MBE. THIN SOLID FILMS, Vol. 343 (pp 558-561)
- Optical investigation of strain-balanced superlattices. SUPERLATTICES AND MICROSTRUCTURES, Vol. 25(1-2) (pp 413-417)
- Effect of growth rate on the morphology and composition of InAs quantum dots grown on GaAs by MBE. MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS(164) (pp 111-116)
- TEM nanoscale analysis of InAs quantum dots grown on GaAs by MBE. ELECTRON MICROSCOPY AND ANALYSIS 1999(161) (pp 585-588)
- Excited states in self-assembled InAs/GaAs quantum plots under high pressure. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 211(1) (pp 73-77)
- Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer. IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 145(5) (pp 292-296)
- Strain-induced quantum confinement of electron gases. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 2(1-4) (pp 272-276)
- Population inversion and intersubband electroluminescence in GaAs/AlGaAs triple barrier tunnelling structures. PHYSICA E, Vol. 2(1-4) (pp 473-477)
- Magneto-optical spectroscopy of InAs/GaAs self-organised quantum dots. PHYSICA E, Vol. 2(1-4) (pp 689-693)
- Inversion of electron sub-band population in a GaAs/AlGaAs triple barrier tunnelling structure. SOLID-STATE ELECTRONICS, Vol. 42(7-8) (pp 1533-1537)
- . Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178), 3 May 1998 - 8 May 1998.
- Surface structure of InP(001) under dynamic and static conditions of molecular beam epitaxy. APPLIED SURFACE SCIENCE, Vol. 123 (pp 313-318)
- Band offsets in near-GaAs alloys. COMPOUND SEMICONDUCTORS 1997, Vol. 156 (pp 279-282)
- Avalanche multiplication in sub-micron AlxGa1-xAs/GaAs heterostructures. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 391-394)
- Design of polarization insensitive semiconductor optical amplifiers at 1300 nm. Optics InfoBase Conference Papers (pp 324-326)
- TEM observations of the variation in the configuration of self-assembled InAs quantum dots on GaAs. ELECTRON MICROSCOPY 1998, VOL 3 (pp 371-372)
- Electrical behaviour of GaAs MESFETs formed on high and low temperature GaAs buffer layers. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO (pp 303-308)
- Magneto-optics of zero-dimensional electron systems. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 1(1-4) (pp 191-197)
- Incorporation of As-2 in InAsxP1-x and its application to InAsxP1-x/InP quantum well structures. JOURNAL OF CRYSTAL GROWTH, Vol. 175 (pp 1033-1038)
- . Third NREL Conference on thermophotovoltaic generation of electricity
- All-optical modulation near 1.55 mu m using In1-x-yGaxAlyAs coupled quantum wells. COMPOUND SEMICONDUCTORS 1996(155) (pp 539-542)
- Impact ionisation and temperature dependence of breakdown in Ga0.52In0.48P. COMPOUND SEMICONDUCTORS 1996(155) (pp 585-588)
- Crack interactions in tensile-strained epilayers. MICROSCOPY OF SEMICONDUCTING MATERIALS 1997(157) (pp 169-172)
- Profiles of cracks formed in tensile epilayers of III-V compound semi-conductors. ELECTRON MICROSCOPY AND ANALYSIS 1997(153) (pp 425-428)
- Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets. IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MIDINFRARED, Vol. 3001 (pp 135-146)
- Observations of low frequency admittance between isolated GaAs structures formed by ion implantation and by epitaxy on epitaxial buffer layers prepared at high and low temperatures. IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC (pp 51-54)
- . Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996, 13 May 1996 - 17 May 1996.
- Impact ionisation coefficients in (AlxGa1-x)(0.52)In0.48P. COMPOUND SEMICONDUCTORS 1995, Vol. 145 (pp 569-574)
- Investigation of g-factors, Zeeman splittings, exchange interactions and field-dependent spin relaxation in III-V quantum wells. SURFACE SCIENCE, Vol. 362(1-3) (pp 435-438)
- Breakdown characteristics of (AlXGa1-X)(0.52)In0.48P p-i-n diodes. ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS (pp 256-260)
- Wannier-Stark ladder spectra in InxGa1-xAs-GaAs strained layer piezo-electric superlattices. SOLID-STATE ELECTRONICS, Vol. 40(1-8) (pp 167-170)
- Visible vertical cavity surface emitting lasers at lambda<650 nm. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 35(1-3) (pp 12-16)
- Exciton effects in strain-balanced GaInAs/AlInAs and GaInAs/GaInAs coupled quantum wells.. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, Vol. 17(11-12) (pp 1607-1612)
- Composition fluctuations in strained InGaAlAs layers grown on (001)InP. ELECTRON MICROSCOPY AND ANALYSIS 1995, Vol. 147 (pp 373-376)
- InxGa1-xAs/InP multiquantum well structures grown on [111]B InP substrates. SEVENTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS (pp 299-302)
- Crack formation in tensile strained III-V epilayers grown on InP substrates. MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, Vol. 146 (pp 207-210)
- X-ray characterisation of quantum well device structures. MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, Vol. 146 (pp 393-398)
- REVERSE BREAKDOWN CHARACTERISTICS IN INGA(AL)P INGAP P-I-N JUNCTIONS. SIXTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS: CONFERENCE PROCEEDINGS (pp 403-406)
- GROWTH AND CHARACTERIZATION OF HIGH-QUALITY GAINP/ALGAINP QUANTUM-WELLS BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY. SIXTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS: CONFERENCE PROCEEDINGS (pp 551-554)
- THE BAND-GAP OF PERFECTLY DISORDERED GA0.52IN0.48P. 12TH NREL PHOTOVOLTAIC PROGRAM REVIEW(306) (pp 529-537)
- . Conference on Optical Fiber Communication/International Conference on Integrated Optics and Optical Fiber Communication, 1993.
- ELECTRON-MICROSCOPY STUDIES OF EPITAXIAL INGAALAS LAYERS GROWN ON INP(001) BY MOLECULAR-BEAM EPITAXY. ELECTRON MICROSCOPY AND ANALYSIS 1993(138) (pp 309-312)
- THE STUDY OF MBE GROWN (001) INXGA1-XP/GAAS STRAINED-LAYER HETEROSTRUCTURES BY TEM AND CL. MICROSCOPY OF SEMICONDUCTING MATERIALS 1993(134) (pp 295-300)
- Optically Induced ElectronicNonlinearities and Passive Optical Bistability in InGaAs/InP Quantum Well Waveguides at 1.5μm. Optics InfoBase Conference Papers (pp 277-280)
- . Spectroscopic Characterization Techniques for Semiconductor Technology IV
- PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY IN ORDERED AND DISORDERED GA0.52IN0.48P. PHOTOVOLTAIC ADVANCED RESEARCH & DEVELOPMENT PROJECT, Vol. 268 (pp 332-337)
- QUANTUM-CONFINED STARK-EFFECT IN INGAAS/INP MULTIPLE QUANTUM-WELLS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY. JOURNAL OF CRYSTAL GROWTH, Vol. 111(1-4) (pp 1080-1083)
- ELECTRICAL-PROPERTIES OF CAMEL DIODES SYNTHESIZED BY SI-MBE. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Vol. 134(8B) (pp C547-C547)
- RECOMBINATION-GENERATION KINETICS IN MBE SILICON. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Vol. 134(8B) (pp C545-C545)
- . Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)
- . LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080)
- . Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129)
- . Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials
- . Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society
- . Proceedings 1996 IEEE Hong Kong Electron Devices Meeting
- . Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95
- . Seventh International Conference on Indium Phosphide and Related Materials
- . Conference on Lasers and Electro-Optics Europe
- . 1993 (5th) International Conference on Indium Phosphide and Related Materials
- . LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels
- . [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials
Working papers
Preprints
- Dynamical suppression of fluctuations in an interacting nuclear spin bath of a self-assembled quantum dot using multiple pulse nuclear magnetic resonance, arXiv.
- Few-second-long correlation times in a quantum dot nuclear spin bath probed by frequency-comb NMR spectroscopy, arXiv.
- Quadrupolar induced suppression of nuclear spin bath fluctuations in self-assembled quantum dots, arXiv.
- Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under non-resonant ultra-low power optical excitation, arXiv.
- From the artificial atom to the Kondo-Anderson model: orientation dependent magneto-photoluminescence of charged excitons in InAs quantum dots, arXiv.
- High resolution nuclear magnetic resonance spectroscopy of highly-strained quantum dot nanostructures, arXiv.
- Polariton states bound to defects in GaAs/AlAs planar microcavities, arXiv.
- Isotope sensitive measurement of the hole-nuclear spin interaction in quantum dots, arXiv.
- Microcavity quantum-dot systems for non-equilibrium Bose-Einstein condensation, arXiv.
- Quantum state preparation in semiconductor dots by adiabatic rapid passage, arXiv.
- Quantum key distribution system in standard telecommunications fiber using a short wavelength single-photon source, arXiv.
- Strongly coupled single quantum dot in a photonic crystal waveguide cavity, arXiv.
- Towards coherent optical control of a single hole spin: Rabi rotation of a trion conditional on the spin state of the hole, arXiv.
- Voltage controlled nuclear polarization switching in a single InGaAs quantum dot, arXiv.
- Two qubit conditional quantum logic operation in a single self-assembled quantum dot, arXiv.
- Intersublevel Polaron Dephasing in Self-Assembled Quantum Dots, arXiv.
- Fast optical preparation, control and read-out of single quantum dot spin, arXiv.
- Long nuclear spin decay times controlled by optical pumping in individual quantum dots, arXiv.
- Single-photon nonlinearity of a semiconductor quantum dot in a cavity, arXiv.
- Nuclear Spin Switch in Semiconductor Quantum Dots, arXiv.
- Anomalous Stark Shifts in Single Vertically Coupled Pairs of InGaAs Quantum Dots, arXiv.
- Teaching activities
-
- EEE6215 (Nanoscale Electronic Devices)
- EEE6216 (Energy efficient Semiconductor Devices)
- EEE260/262 Solar Cell Design Project
- Professional activities and memberships
-
- Professor of Semiconductor Materials
- Chair of the Undergraduate Examination Board
- Departmental REF2021 champion
- Research students
Student Degree Status Primary/Secondary Greenwood P D L PhD Graduated Primary Jin C PhD Graduated Primary Navaretti P PhD Graduated Primary Soong W M
PhD Graduated Secondary Taghi Kahni A PhD Graduated Secondary
Links